Made-to-Order Sputtering
We provide made-to-order sputtering service for Magnetic Recording, Touch Panels, Non-volatile semiconductor memory, electronic devices and electric components. We are able to provide various types of PGM targets.
Machines
RF Plasma Support Sputtering Machine
• Co-Sputtering (3cathode) • Continual Material Research • Precise film by Helicon wave • Reactive Sputtering (Ar, O2, N2)
| Cathode Size | Φ2in × 3(RF) |
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| Max. Substrate Size | - Φ4in. × 1 |
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| Max. Substrate Temp | 500°C |
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| Exhaust System | RP,TP |
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| Max. Depo Power | RF200W |
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| Max. Back Pressure | Below 1.0x10-4Pa |
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| Reverse-Sputter | No |
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| Base Metal Material | Hf, Al, Co, Cr, Cu, Fe, Ge, Mo, Nb, Ni, Si, Sn, Ta, Ti, V, W, Y, Zn, Zr |
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| Precious Metal Material | Au, Pt, Ir, Pd, Rh, Ru, Ag |
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| Oxide Material | Bi2O3, Fe3O4, HfO2, SiO2, Ta2O5, TiO2, V2O5, WO3, Y2O3, ZnO, ZrO2 |
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| Composite Oxide Material | GaZnOx, IZO(In2O3-10wt%ZnO), ITO |
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| Other | Si3N4, TiN, SiC, TiC, Al-Cr2wt%, Al-Nd2at%, Al-Si1wt%, Al-Si1%-Cu0.5wt%, Al-Ti1.5wt%, APC, APC-TR, APC-SR |
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- *We are flexible to sputter materials that are not on our target list. Please contact us for more information.
Long TS Multiple Cathode Sputtering Machine
• Thin film on film substrate and wafer with resist, excellent thickness control • Reactive Sputtering (Ar,O2,N2) • 600℃ substrate heating system | Cathode Size | Φ3in. × 3(RF × 2，DC × 1) |
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| Max. Substrate Size | - Φ8in. × 1 |
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| Max. Substrate Temp | 500°C |
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| Exhaust System | RP, TP, CP |
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| Max. Depo Power | RF300W × 2, DC300W × 1 |
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| Max. Back Pressure | Below 8.0 × 10-5Pa |
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| Reverse-Sputter | Yes |
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| Base Metal Material | Al, Cr, Cu, In, Ni, Re, Si, Sn, Ta, Ti, W, Zr |
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| Precious Metal Material | Au, Pt, Ir, Rd, Ru, Ag, APC |
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| Oxide Material | Al2O3, MgO, SiO2, TiO2, ITO |
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| Composite Oxide Material | AZO, ITO |
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| Other | TaN, Ni-Cr, Ni-Fe, TaC
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*We are flexible to sputter materials that are not on our target list. Please contact us for more information.
8 inch Vacuum Sputtering Machine
• High vacuum Homogeneous film by Φ300mm cathode • 600℃ substrate heating system | Cathode Size | Φ300 × 2（RF+DC） |
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| Max. Substrate Size | - Φ8in. × 5 |
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| Max. Substrate Temp | 600°C |
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| Exhaust System | RP, TP |
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| Max. Depo Power | DC2000W, RF2000W |
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| Max. Back Pressure | Below 2.0 × 10-5Pa |
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| Reverse-Sputter | No |
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| Base Metal Material | Al, Cr, Cu, Si, Ta, Ti |
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| Precious Metal Material | Pt, Ir, Ru |
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| Oxide Material | Al2O3 |
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| Composite Oxide Material | － |
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| Other | Al-Si1at% |
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*We are flexible to sputter materials that are not on our target list. Please contact us for more information.
Interback Sputtering Machine
We can form films on large substrates such as Φ300Si wafers and glass for FPD.
（Ex. ITO Film Formation Penetration rate: 90% at 550nm, sheet resistance: 16Ω） | Cathode Size | 5in. × 30in. |
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| Max. Substrate Size | - 370 × 470 |
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| Max. Substrate Temp | 200°C |
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| Exhaust System | RP, CP |
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| Max. Depo Power | DC2KW × 2 |
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| Max. Back Pressure | Below 1.0x10-4Pa |
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| Sputtering Target | Al, Ta, Ti, W, Ag, APC, APC-TR, APC-SR, IZO(In2O3-10wt%ZnO) , Al-Nd |
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*We are flexible to sputter materials that are not on our target list. Please contact us for more information.
Services
Patterning
In addition to offering made-to-order thin film, we also offer patterning.
Thin Film Analysis
According to customer need, we also provide thin film analysis.
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